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mosfet metaloxidesemiconductorfieldeffecttransistor optimos tm optimos tm power-transistor,60v IPP029N06N datasheet rev.2.6 final powermanagement&multimarket
2 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet to-220-3 1description features ?optimizedforhighperformancesmps,e.g.sync.rec. ?100%avalanchetested ?superiorthermalresistance ?n-channel ?qualifiedaccordingtojedec 1) fortargetapplications ?pb-freeleadplating;rohscompliant ?halogen-freeaccordingtoiec61249-2-21 table1keyperformanceparameters parameter value unit v ds 60 v r ds(on),max 2.9 m w i d 100 a q oss 65 nc q g (0v..10v) 56 nc type/orderingcode package marking relatedlinks IPP029N06N pg-to220-3 029n06n - 1) j-std20 and jesd22 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - - - 100 100 24 a v gs =10v, t c =25c v gs =10v, t c =100c v gs =10v, t c =25c, r thja =50k/w pulsed drain current 1) i d,pulse - - 400 a t c =25c avalanche energy, single pulse 2) e as - - 110 mj i d =100a, r gs =25 w gate source voltage v gs -20 - 20 v - power dissipation p tot - - - - 136 3.0 w t c =25c t a =25c, r thja =50k/w operating and storage temperature t j , t stg -55 - 175 c iec climatic category; din iec 68-1: 55/175/56 3thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case, bottom r thjc - 0.7 1.1 k/w - device on pcb, minimal footprint r thja - - 62 k/w - device on pcb, 6 cm2 cooling area 3) r thja - - 40 k/w - soldering temperature, wave and reflow soldering are allowed t sold - - 260 c reflow msl1 1) see figure 3 for more detailed information 2) see figure 13 for more detailed information 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet 4electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 60 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2.1 2.8 3.3 v v ds = v gs , i d =75a zero gate voltage drain current i dss - - 0.5 10 1 100 a v ds =60v, v gs =0v, t j =25c v ds =60v, v gs =0v, t j =125c gate-source leakage current i gss - 10 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 2.7 3.3 2.9 4.4 m w v gs =10v, i d =100a v gs =6v, i d =25a gate resistance 1) r g 0.65 1.3 1.95 w - transconductance g fs 80 160 - s | v ds |>2| i d | r ds(on)max , i d =100a table5dynamiccharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 4100 5125 pf v gs =0v, v ds =30v, f =1mhz output capacitance c oss - 980 1225 pf v gs =0v, v ds =30v, f =1mhz reverse transfer capacitance c rss - 39 78 pf v gs =0v, v ds =30v, f =1mhz turn-on delay time t d(on) - 17 - ns v dd =30v, v gs =10v, i d =100a, r g,ext ,ext=3 w rise time t r - 15 - ns v dd =30v, v gs =10v, i d =100a, r g,ext ,ext=3 w turn-off delay time t d(off) - 30 - ns v dd =30v, v gs =10v, i d =100a, r g,ext ,ext=3 w fall time t f - 8 - ns v dd =30v, v gs =10v, i d =100a, r g,ext ,ext=3 w 1) defined by design. not subject to production test tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet table6gatechargecharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 20 - nc v dd =30v, i d =100a, v gs =0to10v gate charge at threshold q g(th) - 11 - nc v dd =30v, i d =100a, v gs =0to10v gate to drain charge 2) q gd - 11 15 nc v dd =30v, i d =100a, v gs =0to10v switching charge q sw - 19 - nc v dd =30v, i d =100a, v gs =0to10v gate charge total 2) q g - 56 66 nc v dd =30v, i d =100a, v gs =0to10v gate plateau voltage v plateau - 4.8 - v v dd =30v, i d =100a, v gs =0to10v gate charge total, sync. fet q g(sync) - 49 - nc v ds =0.1v, v gs =0to10v output charge 2) q oss - 65 82 nc v dd =30v, v gs =0v table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continuous forward current i s - - 120 a t c =25c diode pulse current i s,pulse - - 480 a t c =25c diode forward voltage v sd - 1.0 1.2 v v gs =0v, i f =100a, t j =25c reverse recovery time 2) t rr - 54 86 ns v r =30v, i f =100a,d i f /d t =100a/s reverse recovery charge q rr - 77 - nc v r =30v, i f =100a,d i f /d t =100a/s 1) see 2 gate charge waveforms 2 for parameter definition 2) defined by design. not subject to production test tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140 160 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 i d =f( t c ); v gs 3 10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 40 80 120 160 200 240 280 320 360 400 7 v 10 v 6 v 5.5 v 5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 80 160 240 320 400 0 1 2 3 4 5 6 7 8 5 v 5.5 v 6 v 7 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 0 40 80 120 160 200 240 280 320 360 400 175 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 20 40 60 80 100 0 50 100 150 200 g fs =f( i d ); t j =25c tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max typ r ds(on) =f( t j ); i d =100a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0 1 2 3 4 5 750 a 75 a v gs(th) =f( t j ); v gs = v ds diagram11:typ.capacitances v ds [v] c [pf] 0 20 40 60 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 0 10 1 10 2 10 3 25 c 175 c i f =f( v sd );parameter: t j tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet diagram13:avalanchecharacteristics t av [s] i av [a] 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 25 c 100 c 125 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 10 20 30 40 50 60 0 2 4 6 8 10 12 12 v 30 v 48 v v gs =f( q gate ); i d =100apulsed;parameter: v dd diagram15:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 50 54 58 62 66 70 v br(dss) =f( t j ); i d =1ma tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms
11 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet 6packageoutlines figure1outlinepg-to220-3,dimensionsinmm/inches tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms
12 optimos tm power-transistor ,60v IPP029N06N rev.2.6,2015-02-10 final data sheet revisionhistory IPP029N06N revision:2015-02-10,rev.2.6 previous revision revision date subjects (major changes since last revision) 2.5 2014-07-25 rev.2.5 2.6 2015-02-10 insert rg min value = 0.65 ohm welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms

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